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PD - 96929
IRG4BC30FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
C
Fast CoPack IGBT
VCES = 600V
Features
Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.
G E
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing. Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's.
D2Pak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
600 31 17 120 120 12 120 20 100 42 -55 to +150
Units
V A
d
c
Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range
V W C
PD @ TC = 100C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
RJC RCS RJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient (PCB Mounted,steady state)g Weight
Min.
--- --- --- ---
Typ.
--- 0.50 --- 2.0 (0.07)
Max.
1.2 --- 40 ---
Units
C/W
g (oz.)
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12/02/04
IRG4BC30FD-S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
e
Min. Typ. Max. Units
600 -- -- -- -- 3.0 -- 0.69 1.59 1.99 1.7 -- -11 10 -- -- 1.4 1.3 -- -- -- 1.8 -- -- 6.0 -- -- 250 2500 1.7 1.6 100 nA V V V
Conditions
VGE = 0V, IC = 250A VGE = 15V See Fig. 2, 5
V/C VGE = 0V, IC = 1mA IC = 17A V IC = 31A IC = 17A, TJ = 150C VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100V, IC = 17A A VGE = 0V, VCE = 600V
VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Collector-to-Emitter Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
f
-- 6.1 -- -- -- -- --
VGE = 0V, VCE = 600V, TJ = 150C IF = 12A IF = 12A, TJ = 150C VGE = 20V See Fig. 13
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb
Min. Typ. Max. Units
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 51 7.9 19 42 26 230 160 0.63 1.39 2.02 42 27 310 310 3.2 7.5 1100 74 14 42 80 3.5 5.6 80 220 180 120 77 12 28 -- -- 350 230 -- -- 3.9 -- -- -- -- -- -- -- -- -- 60 120 6.0 10 180 600 -- -- nC A ns pF mJ nH ns TJ = 150C mJ ns nC IC = 17A VCC = 400V VGE = 15V TJ = 25C
Conditions
See Fig. 8
IC = 17A, VCC = 480V VGE = 15V, RG = 23 Energy losses inlcude "tail" and diode reverse recovery. See Fig. 9, 10, 11, 18 See Fig. 9,10,11,18 IC = 17A, VCC = 480V VGE = 15V, RG = 23 Energy losses inlcude "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C See Fig. 14 See Fig. 15 See Fig. 16 See Fig. 17 di/dt 200A/s VR = 200V IF = 12A See Fig. 7
A/s TJ = 25C TJ = 125C
2
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IRG4BC30FD-S
Same type device as D.U.T.
90% Vge +Vge
Vce
80% of Vce
430F D.U.T.
Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Eoff =
t1+5S Vce Ic Vceic dtdt
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
Ic
trr
Qrr =
trr id dt Ic dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk
10% Irr Vcc
Vpk
Irr
Ic DIODE RECOVERY WAVEFORMS
td(on)
tr
5% Vce t2 Eon = Vce ieIc dt Vce dt t1
t1
t2
DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd idIc dt Vd dt t3
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC30FD-S
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig.18e - Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000F 100V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
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IRG4BC30FD-S
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
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25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
10
Q6SUAIVH7@S A$"T 96U@A8P9@ QA2A9@TDBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G @6SAA2A! X@@FA! 6A2A6TT@H7GATDU@A8P9@
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IRG4BC30FD-S
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961) 3
4
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20). VCC=80%(VCES), VGE=20V, L=10H, RG = 23 (figure 19). Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. When mounted on 1" square PCB (FR-4 or G-10 Material).
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04
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